Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study

Hun Hee Lee; Min Sang Yun; Hyun Wook Lee; Jin Goo Park

doi:10.4028/www.scientific.net/SSP.195.128

Paper Titles

Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue Removal
p.110

Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process
p.114

Analysis of Oxidized Copper Surface and its Evolution
p.119

Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning
p.124

Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study
p.128

UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent
p.132

One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues
p.136

Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography
p.139

Selective High-Throughput TiN Etching Methods
p.143

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Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study

Abstract:

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP⁺ (dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP⁺ chemicals for cleaning processes also increases [.