Structural and Electronic Properties of B-Doped ZnO Monolayer

Xin Tong; Jun Qing Wen; Peng Hui Tian; Yu Tian Lei

doi:10.4028/www.scientific.net/MSF.996.15

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Preface

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Ultra-Bright 2D Assembled Copper Nanoclusters: Fluorescence Mechanism Exploration and LED Application
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Study of Electron Beam Pre-Irradiation on Char Yields of Polyacrylonitrile
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Study on Preparation and Application of Protein Filler by Chitosan Modified Keratin
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HomeMaterials Science ForumMaterials Science Forum Vol. 996Structural and Electronic Properties of B-Doped...

Structural and Electronic Properties of B-Doped ZnO Monolayer

Abstract:

The geometrical and electronic properties of B-doped ZnO monolayer with the concentrations of 12.5% and 25% have been calculated using the first-principles method. B-doped ZnO monolayer leads to the structural distortion around the doped atoms compared with the pure ZnO sheet. The B-B pair or two B-B pairs doped ZnO monolayer present nonmagnetic metal.

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Periodical:

Materials Science Forum (Volume 996)

Pages:

15-19

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.996.15

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Online since:

June 2020

Authors:

Xin Tong*, Jun Qing Wen, Peng Hui Tian, Yu Tian Lei

Keywords:

B-Doped ZnO Monolayer, Electronic Structures, First-Principles Method

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* - Corresponding Author

References

[1] H.P. Wu, J.L. Shi, F. Yan, J.J. Yang, Y.B. Zhang, X.D. He, Chin. Opt. Lett. 15 (2017) 012901.

Google Scholar

[2] S. Tabassum, E. Yamasue, H. Okumura, K.N. Ishihara, Appl. Surf. Sci. 377 (2016) 355.

Google Scholar

[3] Y.L. Su, Q.Y. Zhang, N. Zhou, C.Y. Ma, X.Z. Liu, J.J. Zhao, Solid State Commun. 250 (2017) 123.

Google Scholar

[4] C. Tusche, H.L. Meyerheim, J. Kirschner, Phys. Rev. Lett. 99 (2007) 026102.

Google Scholar

[5] H.M. Wu, X.J. Wu, Y. Pei, X.C. Zeng, Nano Res. 4 (2011) 233.

Google Scholar

[6] A.R. Botello-Méndez, F. López-Urías, M. Terrones, H. Terrones, Nano lett. 8 (2008)1562.

DOI: 10.1021/nl072511q

Google Scholar

[7] A.R. Botello-Méndez, F. López-Urías, M. Terrones, H. Terrones, Nano Res. 1 (2008) 420.

DOI: 10.1007/s12274-008-8042-3

Google Scholar

[8] M.Y. Wu, D. Sun, C.L. Tan, X.H. Tian, Y.W. Huang, Materials 10 (2017) 359.

Google Scholar

[9] J. Ren, H. Zhang, X. Cheng, Int. J. Quantum Chem. 113 (2013) 2243.

Google Scholar

[10] A.L. He, X.Q. Wang, R.Q. Wu, Y.H. Lu, Y.P. Feng, J. Phys.: Condens. Matter 22 (2010) 175501.

Google Scholar

[11] T.M. Schmidt, R.H. Miwa, A. Fazzio, Phys. Rev. B 81 (2010) 195413.

Google Scholar

[12] C.L. Tan, D. Sun, D.S. Xu, X.H. Tian, Y.W. Huang, Ceram. Int. 42 (2016) 10997.

Google Scholar

[13] D. Sarkar, C.K. Ghosh, K.K. Chattopadhyay, Appl. Surf. Sci. 418 (2017) 252.

Google Scholar

[14] H.Y. Guo, Y. Zhao, N. Lu, E. Kan, X.C. Zeng, X.J. Wu, J.L. Yang, J. Phys. Chem. C 116 (2012) 11336.

Google Scholar

[15] J.Q. Wen, J.M. Zhang, X. Yang, H. Wu, J. Supercond Nov. Magn. 31 (2018) 1833.

Google Scholar