Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

Yeganeh Bonyadi; Peter M. Gammon; Olayiwola Alatise; Roozbeh Bonyadi; Phillip Mawby

doi:10.4028/www.scientific.net/MSF.924.440

Paper Titles

4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
p.423

Effect of Design Variations and N₂O Annealing on 1.7kV 4H-SiC Diodes
p.428

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation
p.432

Local Lifetime Control in 4H-SiC by Proton Irradiation
p.436

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
p.440

Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
p.444

Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
p.449

Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs
p.453

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
p.457

HomeMaterials Science ForumMaterials Science Forum Vol. 924Lifetime Enhancement of 4H-SiC PiN Diodes Using...

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

Abstract:

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O₂ at 1550^◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

440-443

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.440

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Online since:

June 2018

Authors:

Yeganeh Bonyadi*, Peter M. Gammon, Olayiwola Alatise, Roozbeh Bonyadi, Phillip Mawby

Keywords:

4H-SiC, Carrier Lifetime Enhancement, Clamped Inductive Switching, Forward I-V Characteristics, PiN Diode, Reverse I-V Characteristics, Thermal Oxidation

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