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Paper Titles
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Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
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Short-Circuit Robustness Testing of SiC MOSFETs
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Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
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Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

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Abstract:

An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the doping concentration in the Drift–region, the trade–off between the ON–resistance, RON, and the maximum blocking voltage, VBL, that is the Drain-Source voltage for which the avalanche breakdown appears at the p+–well/n-DRIFT junction together with the breakdown of the Gate oxide. Finding such trade-off means to maximize, Figure-Of-Merit. Our results are based on a novel full–analytical model of the electric field in the Gate oxide, EOX, whose generality is ensured by the absence of fitting and empirical parameters. Model results are successfully compared with 2D–simulations covering a wide range of device performances.

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Silicon Carbide and Related Materials 2016 View Preview

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Periodical:

Materials Science Forum (Volume 897)

Pages:

529-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.529

Citation:

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Online since:

May 2017

Authors:

Luigi di Benedetto*, Gian Domenico Licciardo, Tobias Erlbacher, Anton J. Bauer, Alfredo Rubino

Keywords:

Design Methodology, Power Device, Power MOSFET, Semiconductor Device Modeling

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* - Corresponding Author

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