Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

Sandip Kumar Roy; Jesus Urresti Ibanez; Anthony ONeill; Nick G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.897.327

Paper Titles

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
p.307

Effect of 3C-SiC Irradiation with 8 MeV Protons
p.311

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
p.315

Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties
p.323

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
p.327

Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
p.331

Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing
p.335

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
p.340

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C
p.344

HomeMaterials Science ForumMaterials Science Forum Vol. 897Characterisation of 4H-SiC MOS Capacitor with a...

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

Abstract:

Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O₂ rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.