Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC

Sauvik Chowdhury; Kensaku Yamamoto; Collin W. Hitchcock; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.821-823.500

Paper Titles

Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
p.484

Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
p.488

Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
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Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
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Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
p.500

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
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Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
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MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
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An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

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Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC

Abstract:

MOS capacitors have been fabricated on (0001), (11-20) and (000-1) oriented 4H-SiC under different post-oxidation anneal (POA) conditions. 100 MHz conductance measurement shows the generation of very fast donor-type interface traps after NO anneal for both Si-face (0001) and a-face (11-20), but not on C-face (000-1). Fast traps were not observed in POCl₃ annealed samples for any orientation. Smallest D_it (at 0.2 eV below conduction band edge) was obtained on Si-face using POCl₃ anneal (1.4x10¹¹ cm^-2 eV^-1), on a-face using NO anneal (2.5x10¹¹ cm^-2 eV^-1) and on C-face using POCl₃ anneal (4.5x10¹² cm^-2 eV^-1).