Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals
p.265
p.265
Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers
p.269
p.269
A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method
p.273
p.273
The Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC Polytypes
p.277
p.277
Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures
p.281
p.281
Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
p.285
p.285
Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
p.289
p.289
Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293
p.293
Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
p.297
p.297
Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures
Abstract:
3C-SiC(100) was grown on Si (100) in a thickness range between 40 and 500 nm by low pressure chemical vapor deposition. The mechanical properties and the residual stress were determined using the length dependence of the resonance frequencies of cantilevers and beams. Taking into account the influence of the cantilever bending and the stress gradients the Young’s modulus of the 3C-SiC(100) was obtained. It decreases with decreasing thickness of the epitaxial layer grown on Si (100).
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Periodical:
Materials Science Forum (Volumes 821-823)
Pages:
281-284
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Online since:
June 2015
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