Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
p.836
p.836
High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
p.841
p.841
Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
p.845
p.845
VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
p.851
p.851
13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
p.855
p.855
Variant of Excess Current in 4H-SiC pn Structures
p.859
p.859
The Cryogenic Testing and Characterisation of SiC Diodes
p.863
p.863
Comparison of 5kV SiC JBS and PiN Diodes
p.867
p.867
650V SiC JFET for High Efficiency Applications
p.871
p.871
13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
Abstract:
We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
855-858
Citation:
Online since:
February 2014
Authors:
Dai Okamoto*, Yasunori Tanaka, Tomonori Mizushima, Mitsuru Yoshikawa, Hiroyuki Fujisawa, Kensuke Takenaka, Shinsuke Harada, Shuji Ogata, Toshihiko Hayashi, Toru Izumi, Tetsuro Hemmi, Atsushi Tanaka, Koji Nakayama, Katsunori Asano, Kazushi Matsumoto, Naoyuki Ohse, Mina Ryo, Chiharu Ota, Kazuto Takao, Makoto Mizukami, Tomohisa Kato, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura
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