4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
p.193
p.193
Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth
p.197
p.197
First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
p.201
p.201
Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates
p.206
p.206
HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
p.210
p.210
Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System
p.214
p.214
Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements
p.218
p.218
Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer
p.222
p.222
Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate
p.226
p.226
HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
Abstract:
The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
210-213
Citation:
Online since:
February 2014
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