Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

Yoshihiro Sugawara; Y. Yao; Yukari Ishikawa; Katsunori Danno; Hiroshi Suzuki; Takeshi Bessho; Yoichiro Kawai; Yuichi Ikuhara

doi:10.4028/www.scientific.net/MSF.725.11

Paper Titles

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
p.3

Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
p.7

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
p.11

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.15

Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

HomeMaterials Science ForumMaterials Science Forum Vol. 725Characterization of Dislocation Structures in...

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

Abstract:

We developed the transmission electron microscopy (TEM) sample preparation technique for the low dislocation density of 4H-SiC by combining the KOH+Na₂O₂ (KN) etching and the focused ion beam (FIB) microsampling technique. The dislocation under sea-shell pit was then characterized by large-angle convergent-beam electron diffraction (LACBED). It is demonstrated that this method is powerful for evaluating Burgers vectors of dislocations. Burgers vector of the measured basal plane dislocation (BPD) is determined to be b=1/3[-12-10]. Two-beam bright-field (TBBF) imaging identified the rotating direction of the threading screw dislocation (TSD) is counter-clockwise.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.11

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Online since:

July 2012

Authors:

Yoshihiro Sugawara, Y. Yao, Yukari Ishikawa, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho, Yoichiro Kawai, Yuichi Ikuhara

Keywords:

Dislocation Structure, Hexagonal Silicon Carbide, Transmission Electron Microscopy (TEM)

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