Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

Bilal Jabakhanji; Nicolas Camara; Alessandra Caboni; Christophe Consejo; Benoit Jouault; Philippe Godignon; Jean Camassel

doi:10.4028/www.scientific.net/MSF.711.235

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Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)
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HomeMaterials Science ForumMaterials Science Forum Vol. 711Almost Free Standing Graphene on SiC(000-1) and...

Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

Abstract:

We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

235-241

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.235

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Online since:

January 2012

Authors:

Bilal Jabakhanji, Nicolas Camara, Alessandra Caboni, Christophe Consejo, Benoit Jouault, Philippe Godignon, Jean Camassel

Keywords:

Epitaxial Graphene, Magneto Transport, Raman Spectroscopy

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