Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Takeshi Ohshima; Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Shinji Nozaki; Kazutoshi Kojima

doi:10.4028/www.scientific.net/MSF.679-680.362

Paper Titles

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
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Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
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On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
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Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
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Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
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Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
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Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Oxygen Ion Induced Charge in SiC MOS Capacitors...

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Abstract:

Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC) before and after gamma-ray irradiations. The peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The decrease in the TIBIC peak eventually saturated. The TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to gate oxide. Small decrease in both the peak amplitude of TIBIC signal and collected charge was observed due to gamma-ray irradiation.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

362-365

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.362

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Online since:

March 2011

Authors:

Takeshi Ohshima, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Shinji Nozaki, Kazutoshi Kojima

Keywords:

Gamma-Ray Irradiation Effects, Metal-Oxide-Semiconductor (MOS) Capacitor, Transient Ion Beam Induced Current (TIBIC)

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