Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

Jean Lorenzzi; Nikoletta Jegenyes; Mihai Lazar; Dominique Tournier; François Cauwet; Davy Carole; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.679-680.111

Paper Titles

Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
p.95

Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
p.103

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂]
p.107

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
p.115

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
p.119

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
p.123

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy
p.127

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Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

Abstract:

In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two different deposition techniques were used and compared: vapour-liquid-solid (VLS) mechanism and chemical vapour deposition (CVD). The results in terms of surface morphology evolution and the polytype formation using these growth techniques were studied and compared. It was observed both 4H lateral growth from the mesa sidewalls and 3C enlargement on top of the mesas, the former being faster with CVD and VLS. Only VLS technique allowed elimination of twin boundaries for proper orientation of the mesa sidewalls.