Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

J. Pezoldt; Francisco M. Morales; Thomas Stauden; Christian Förster; Efstathios K. Polychroniadis; J. Stoemenos; D. Panknin; Wolfgang Skorupa

doi:10.4028/www.scientific.net/MSF.527-529.295

Paper Titles

Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
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Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
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Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
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‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
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Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
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Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
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Growth of 3C-SiC on Si Molds for MEMS Applications
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Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Growth Acceleration in FLASiC Assisted Short Time...

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Abstract:

Flash lamp annealing of multilayer stack of the type SiC/Silicon overlayer(SOL)/SiC reduces the defect densities in the 3C-SiC/Si heteroepitaxial structure. Ge and C additions to the SOL lead to a substantial increase of the mass transfer from the upper layer to the lower SiC layer. If the Ge content of the SOL and the flash lamp annealing conditions are properly chosen a homogeneous layer with a 3C-SiC thickness between 150 and 200 nm can be achieved corresponding to a growth rate between 7.5 and 10.0 +m/s. The thickening of the lower layer depends on the SOL composition. Ge and/or C incorporation into the SOL and therefore into the Si melt enhances the mass transport from the upper SiC layer to the lower one.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.295

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Online since:

October 2006

Authors:

J. Pezoldt, Francisco M. Morales, Thomas Stauden, Christian Förster, Efstathios K. Polychroniadis, J. Stoemenos, D. Panknin, Wolfgang Skorupa

Keywords:

3C-SiC, Flash Lamp Annealing, FLASiC, Heteroepitaxy, Liquid Phase Epitaxy (LPE), Silicon

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