Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
p.1457
p.1457
Porous Silicon Carbide as a Membrane for Implantable Biosensors
p.1463
p.1463
Triangular Pore Formation in Highly Doped n-Type 4H SiC
p.1467
p.1467
Porous Structure of Anodized p-Type 6H SiC
p.1471
p.1471
Vibrational and Emission Properties of Porous 6H-SiC
p.1475
p.1475
Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability
p.1479
p.1479
SiC Base Micro-Probe for Myocardial Ischemia Monitoring
p.1483
p.1483
Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes
p.1487
p.1487
Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector
p.1491
p.1491
Vibrational and Emission Properties of Porous 6H-SiC
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
1475-1478
Citation:
Online since:
June 2004
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