Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357
p.357
Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
p.361
p.361
Electrical and Optical Characterization of SiC
p.365
p.365
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
p.371
p.371
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
p.375
p.375
Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
p.379
p.379
On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
p.383
p.383
High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
p.387
p.387
Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
p.391
p.391
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
375-378
Citation:
Online since:
September 2003
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