Paper Titles

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC
p.513

Electrical Properties of Neutron-Irradiated Silicon Carbide
p.517

Radiation-Induced Defects in p-Type Silicon Carbide
p.521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
p.525

Electronic Localization around Stacking Faults in Silicon Carbide
p.529

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
p.533

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC
p.537

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC
p.541

Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
p.545

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electronic Localization around Stacking Faults in...

Electronic Localization around Stacking Faults in Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

529-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.529

Citation:

Cite this paper

Online since:

April 2002

Authors:

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

Keywords:

Band-Gap States, First-Principle Calculations, Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions