Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
p.439
p.439
Implantation Temperature Dependent Deep Level Defects in 4H-SiC
p.443
p.443
Boron in SiC: Structure and Kinetics
p.447
p.447
Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
p.451
p.451
Boron Centers in 4H-SiC
p.455
p.455
Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient
p.459
p.459
Electrical Activity of Isolated Oxygen Defects in SiC
p.463
p.463
Beryllium-Related Defect Centers in 4H-SiC
p.467
p.467
Band Gap States of Cr in the Lower Part of the SiC Band Gap
p.471
p.471
Boron Centers in 4H-SiC
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
455-458
Citation:
Online since:
January 2001
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