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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Epitaxial Growth of β-SiC on Ion-Beam Synthesized...

Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

309-312

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.309

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Online since:

May 2000

Authors:

A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, Jaume Esteve, M.C. Acero, Reinhard Kögler, Wolfgang Skorupa, Mikael Östling, Nils Nordell, S. Karlsson, J. Van Landuyt

Keywords:

CVD Growth, FT-IR, Ion Beam Synthesis, TEM, X-Ray Diffraction (XRD)

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