Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
p.315
p.315
Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped AlxGa1-xAs
p.321
p.321
Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
p.327
p.327
Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
p.333
p.333
Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
p.339
p.339
Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
p.345
p.345
Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
p.351
p.351
Optical Absorption Lines in Heat-Treated GaAs
p.357
p.357
Te-Related Donor States in AlxGa1-xAs
p.363
p.363
Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
339-344
Citation:
Online since:
January 1993
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