Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier

Meng Ling Tao; Xiao Chuan Deng; Hao Wu; Yi Wen

doi:10.4028/www.scientific.net/MSF.1014.115

Paper Titles

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A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window
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Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier
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Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 1014Design, Fabrication and Characterization of...

Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier

Abstract:

A 10kV/100A SiC PiN rectifier with MRM-JTE (multiple-ring modulated junction termination extension) is designed, fabricated and characterized. The optimized MRM-JTE achieves high breakdown capability and extends the optimal JTE dose window. A 100μm thick epitaxial SiC PiN rectifier with a doping concentration of 5×10¹⁴cm⁻³ has been fabricated using a standard TZ-JTE process. A 5.4V forward voltage drop is obtained at 100A forward current. Moreover, a measured breakdown voltage is up to 13.5kV corresponding to about 96% of the ideal parallel plane junction. The fabricated device exhibits a low R_ON,SP of 3.76mΩ·cm² at 200A/cm² , and a high BFOM of 48.5GW/cm². In addition, the C-V characteristic and reverse recovery switch characteristic are also analyzed. In this paper, the successfully fabrication of high-voltage SiC PiN rectifier provides a further development for high-voltage high-power SiC power modules.

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Periodical:

Materials Science Forum (Volume 1014)

Pages:

115-119

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1014.115

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Online since:

November 2020

Authors:

Meng Ling Tao, Xiao Chuan Deng*, Hao Wu, Yi Wen

Keywords:

BFOM, PiN Rectifier, Silicon Carbide, Ultra-High Voltage

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* - Corresponding Author

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