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HomeJournal of Nano ResearchJournal of Nano Research Vol. 583D Simulation Investigating ZnO NWFET...

3D Simulation Investigating ZnO NWFET Characteristics

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Abstract:

3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm²/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (R_con ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (Q_IT = 3.79 x 10¹⁵cm^-2). The Q_IT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function g_GA(E) and an acceptor-like Gaussian deep state function g_TA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm²/Vs.

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Journal of Nano Research Vol. 58

Info:

Periodical:

Journal of Nano Research (Volume 58)

Pages:

40-48

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.58.40

Citation:

Cite this paper

Online since:

June 2019

Authors:

Nonofo M.J. Ditshego*, Suhana Mohamed Sultan

Keywords:

3D Simulation, Contact Resistance, Device De-Embedding, Field Effect Transistor, Nanowire, Zinc Oxide (ZnO)

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Creative Commons CC BY 4.0

* - Corresponding Author

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