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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 194-199Diffusion of Implanted 195Au Radiotracer Atoms in...

Diffusion of Implanted ¹⁹⁵Au Radiotracer Atoms in Amorphous Silicon under Irradiation with 1 Mev-N⁺ Ions

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Diffusion in Materials DIMAT2000

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Pages:

659-666

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.194-199.659

Citation:

Cite this paper

Online since:

April 2001

Authors:

T. Voss, P. Scharwaechter, W. Frank, Isolde Collaboration Isolde Collaboration

Keywords:

Diffusion of Implanted ¹⁹⁵Au, Diffusion Retardation and Enhancement by Intrinsic Defects, Diffusion under N⁺-Irradiation, Gold-Doped Amorphous Silicon, Interstitial-like ¹⁹⁵Au-Diffusion, Radiotracer Technique, Sophisticated Diffusion Profiles

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