Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures

Sattam Alotaibi; Nare Gabrielyan; Shashi Paul

doi:10.4028/www.scientific.net/AST.95.100

Paper Titles

Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium
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Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
p.84

Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation
p.91

Resistive Switching Behavior in Undoped α-Fe₂O₃ Film with a Low Resistivity
p.96

Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures
p.100

Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture
p.107

Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
p.113

Thermal Conductivity Measurement of a Sb₂Te₃ Phase Change Nanowire
p.120

MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability
p.126

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 95Two Terminal Non-Volatile Memory Devices Using...

Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures

Abstract:

This work illustrates a novel device for storing electronic charge and works as a non-volatile memory device. It is fabricated using an industrial technique and consists of silicon nanostructures and diamond like carbon (DLC) as a memory element and an ultra-thin barrier layer respectively. Both the silicon nanostructures and the DLC have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. The nanostructures are sandwiched between two DLC layers. To understand the ability of silicon nanostructures to store electronic charge current-voltage (I-V) and current-time (I-t) measurements were carried out. The memory effect is noted as the difference between the two electrical conductivity states (low ‘‘0’’ and high ‘‘1’’).

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Periodical:

Advances in Science and Technology (Volume 95)

Pages:

100-106

DOI:

https://doi.org/10.4028/www.scientific.net/AST.95.100

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Online since:

October 2014

Authors:

Sattam Alotaibi*, Nare Gabrielyan, Shashi Paul

Keywords:

Diamond-Like Carbon (DLC), Non-Volatile Memory (NVM), Silicon Nanostructures, Two Terminal Memories

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