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P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications
Abstract:
The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.
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Pages:
225-228
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Online since:
April 2011
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