Influence of Crystal Defects on the Reflectivity of the Aluminum

S.P. Umnov; O.Kh. Asainov; A.N. Lemachko

doi:10.4028/www.scientific.net/AMM.756.164

Paper Titles

Specifics of Welded Joint Destruction Obtained by Friction Stir Welding at Strain
p.137

Reduction of Metal Consumption in View of Mining Cutting Tools Operation
p.144

Assessing the Metal Consumption for Manufacturing a Conical Part by Hollow Billet Crimp-Expansion and Sheet Blanks Drawing Crimping
p.150

Thermally Conductive Polymeric Materials and their Usage in LED-Devices
p.159

Influence of Crystal Defects on the Reflectivity of the Aluminum
p.164

Copper Removal from Industrial Wastewaters by Natural Clinoptilolite and Mordenite
p.169

Inquiring into Structure of Hyperbranched Polyethylene Produced in Radical Polymerization Process
p.173

Assumed Mechanism of Polymeric Deposit Formation in Recycle Propylene Washing Column during Bulk Polymerization
p.179

Modeling of Mechanical Behavior of Ceramic Nanocomposites
p.187

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 756Influence of Crystal Defects on the Reflectivity...

Influence of Crystal Defects on the Reflectivity of the Aluminum

Abstract:

The effect of ion-assisted deposition of the Al films on their UV reflectance is investigated in this paper. The films' reflectance is measured by a spectrophotometer. The obtained films are examined by using transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The TEM and AFM measurements allow the determination of the size of crystallites in a film and its microstructure. The XRD analysis reveals that the films deposited with argon ion-beam assist are characterized by much higher microstress levels compared to the films deposited without ion assist. The comparison of the Al films’ reflectance measurements indicate that the films with a higher microstress level (hence, higher defect concentration) are characterized by the enhanced reflectance in the UV region. The conducted investigation shows that the defects of the Al films’ crystalline structure affect its optical properties.

You might also be interested in these eBooks

Mechanical Engineering, Automation and Control Systems

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 756)

Pages:

164-168

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.756.164

Citation:

Cite this paper

Online since:

April 2015

Authors:

S.P. Umnov, O.Kh. Asainov, A.N. Lemachko

Keywords:

Ion Assistance, Lattice Defects, Magnetron Sputtering, Reflectivity of Al

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] G. Hass, J. E Waylonis, Optical constants and reflectance and transmittance of evaporated aluminum in the visible and ultraviolet, JOSA. 51 (1961), 719-722.

DOI: 10.1364/josa.51.000719

Google Scholar

[2] H. V. Nguyen, Ilsin An,R. W. Collins, Evolution of the optical function of aluminum films during nucleation and growth determined by real-time spectroscopic ellipsometry, Phys. Rev. Lett. 68 (1992) 994-997.

DOI: 10.1103/physrevlett.68.994

Google Scholar

[3] H. Monard, F. Sabary, Optical properties of silver, gold and aluminum ultra-thin granular films evaporated on oxidized aluminum, Thin Solid Films. 310 (1997) 265-273.

DOI: 10.1016/s0040-6090(97)00331-3

Google Scholar

[4] Hao Du, Jin Quan Xiao, You Sheng Zou et al., Optical properties of ultrathin aluminum films deposited by magnetron sputtering in visible band, Opt. Mater. 28 (2006) 944-949.

DOI: 10.1016/j.optmat.2005.04.011

Google Scholar

[5] Shiuh Chuan Her, Yi Hsiag Wang, Effect of temperature and humidity on the optical property of aluminum films, Appl. mechanics and materias. 3930 (2010) 121-126.

Google Scholar

[6] Sung-Hwa Kim, Chang Kwon Hwangbo, Influence of Ar ion-beam assistance and annealing temperatures on properties of Tio2 thin films deposited by reactive DC magnetron sputtering, Thin Solid Films. 475 (2005) 155-159.

DOI: 10.1016/j.tsf.2004.08.035

Google Scholar

[7] W. Ensinger, Low energy ion assist during deposition – an effective tool for controlling thin film microstructure, Nuc. Instrum. and Methods Phys. Res. Sect. B. 127-128 (1997) 796-808.

DOI: 10.1016/s0168-583x(97)00010-4

Google Scholar

[8] Michal Novotny, Jiri Bulir, Jan Lancok et al., In-situ monitoring of the growth of nanostructured aluminum thin film, Journal of Nanophotonics. 5 (2011) 051503-1÷051503-10.

DOI: 10.1117/1.3543816

Google Scholar

[9] Hien V. Nguyen, Ilsin An, R.W. Collins, Evolution of the functions of thin-film aluminum: A real-time spectroscopic ellipsometry, Phys. Rev. B. 47 (1993) 3947-3965.

DOI: 10.1103/physrevb.47.3947

Google Scholar

[10] Philip Martin, Roger Netterfield, Terry Kinder et al., Optical properties and stress of ion-assisted aluminum nitride thin films, Appl. Opt. 31 (1992) 6734-6740.

DOI: 10.1364/ao.31.006734

Google Scholar

[11] Oleg Asainov, Sergey Umnov, Increased ultraviolet reflectivity of magnetron deposited Al films, The 7th International Forum on Strategic Technology IFOST2012 September 17-21, Vol. I (2012) 292-295 (doi: 10. 1109/IFOST. 2012. 6357554).

DOI: 10.1109/ifost.2012.6357554

Google Scholar