Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
p.224
p.224
Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing
p.229
p.229
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
p.235
p.235
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
p.241
p.241
Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
p.246
p.246
Identification of High Resolution Transient Thermal Network Model for Power Module Packages
p.253
p.253
Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
p.258
p.258
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
p.263
p.263
Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
p.268
p.268
Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
Abstract:
Post-growth thermal processing at higher temperature generates more BPDs (basal plane dislocations). It is observed that dislocation visibility in surface inspection tool images varies significantly even at comparable dislocation densities. Combination of dislocation decoration and light absorbance from SiC matrix by point defects or dopants has been proposed as a working hypothesis to explain dislocation visibility variations.
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Info:
Periodical:
Materials Science Forum (Volume 1062)
Pages:
246-250
Citation:
Online since:
May 2022
Authors:
Permissions: