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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Terahertz Emission from Phosphor Centers in SiGe...

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

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Abstract:

Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ~ 2.3 - 3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

613-618

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.613

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Cite this paper

Online since:

October 2007

Authors:

Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann, H.H. Radamson, N.A Bekin, A.N. Yablonsky, R.Kh. Zhukavin, Y.N. Drozdov, V.N. Shastin

Keywords:

Silicon Germanium, Terahertz Emission

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