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Observation of AlO x material in electrical resistive switching for nonvolatile random access memory application

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Abstract

We fabricated an Al / AlO x / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlO x material has various possibilities for use in nonvolatile random access memory applications.

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Authors and Affiliations

  1. Department of Nano Science & Technology, University of Seoul, Seoul, 02504, Korea

    Kyun-Ho Jung, Seung-Gon Song, Kyoung-Wan Park & Jung-Hyun Sok

  2. Department of Nano Engineering, University of Seoul, Seoul, 02504, Korea

    Kyong-Min Kim

  3. Department of Industrial and Management Engineering, Myongji University, Yongin, 17058, Korea

    Yun-Sun Park

Authors
  1. Kyun-Ho Jung
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  2. Seung-Gon Song
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  3. Kyoung-Wan Park
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  4. Jung-Hyun Sok
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  5. Kyong-Min Kim
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  6. Yun-Sun Park
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Correspondence to Jung-Hyun Sok.

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Jung, KH., Song, SG., Park, KW. et al. Observation of AlO x material in electrical resistive switching for nonvolatile random access memory application. Journal of the Korean Physical Society 70, 489–493 (2017). https://doi.org/10.3938/jkps.70.489

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  • DOI: https://doi.org/10.3938/jkps.70.489

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