Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts
Abstract
:1. Introduction
2. Synthesis of High-Density CNT Array
3. Low-Temperature Synthesis of CNT Array
4. Direct Growth of CNT on 2D Materials Substrates
5. Summary
Author Contributions
Funding
Conflicts of Interest
References
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Ref | Catalyst/nm | Temp. | Precursor | Substrate | ID/IG | Nwall (cm−2) | Ntube (cm−2) |
---|---|---|---|---|---|---|---|
[14] | Ni-Al-Ni/ 1-0.5-1 | 340 °C | CH4 | ZrO2 | 0.85 | / | 1 × 1010 |
Ni-Al-Ni/ 1-0.5-1 | 450 °C | CH4 | ZrO2 | 0.81 | / | 5 × 1011 | |
Ni/2 | 450 °C | CH4 | ZrO2 | / | / | 1 × 1011 | |
[27] | Co-Al-Mo/ 2.5-0.5-5 | 450 °C | C2H2 | Cu | 0.9 | 4.1 × 1012 | 1.3 × 1011 |
[29] | Co-Mo/ 2.5-0.8 | 450 °C | C2H2 | Ti/Cu | 1 | 7.8 × 1012 | 5.5 × 1011 |
Co-Mo/ 2.5-0.3 | 450 °C | C2H2 | Ti/Cu | 0.9 | 4.8 × 1012 | 5.6 × 1011 | |
Co/2.5 | 450 °C | C2H2 | Ti/Cu | 0.8 | 2.4 × 1012 | 2.7 × 1011 | |
[36] | Ni-Al-Ni/ 2-1-2 | 350 °C | CH4 | TiSi | / | 1 × 1012 | 2 × 1010 |
Ni/4 | 350 °C | CH4 | TiSi | / | / | 5.9 × 109 | |
[38] | Co-TiN/ 0.5-0.5 | 450 °C | CH4 | TaN | / | / | 1 × 1012 |
[39] | Ni/0.6 | 400 °C | C2H2 | TiN | / | 1.2 × 1013 | 1.5 × 1012 |
[53] | Co-Al/3 | 350 °C | C2H2 | Ti | 0.83 | / | 5 × 1010 |
Co/5 | 350 °C | C2H2 | Ti | 0.65 | / | 5 × 1010 |
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Ma, Z.; Zhou, S.; Zhou, C.; Xiao, Y.; Li, S.; Chan, M. Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts. Nanomaterials 2020, 10, 1918. https://doi.org/10.3390/nano10101918
Ma Z, Zhou S, Zhou C, Xiao Y, Li S, Chan M. Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts. Nanomaterials. 2020; 10(10):1918. https://doi.org/10.3390/nano10101918
Chicago/Turabian StyleMa, Zichao, Shaolin Zhou, Changjian Zhou, Ying Xiao, Suwen Li, and Mansun Chan. 2020. "Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts" Nanomaterials 10, no. 10: 1918. https://doi.org/10.3390/nano10101918