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Licensed Unlicensed Requires Authentication Published by De Gruyter September 28, 2017

Improved quality of flash-lamp-crystallized polycrystalline silicon films by using low defect density Cat-CVD a-Si films

  • Takaki Nozawa and Keisuke Ohdaira

Abstract

We investigate the influence of the quality of precursor amorphous silicon (a-Si) films on the quality of flash-lamp-crystallized (FLC) polycrystalline Si (poly-Si) films by tuning the conditions of a-Si deposition by catalytic chemical vapor deposition. Electron spin resonance measurement reveals that the defect density of FLC poly-Si films is affected by the defect density of a-Si films, and FLC poly-Si films with lower defect density can be formed by using precursor a-Si films with lower defect density. The same tendency is also confirmed through μ-PCD measurement. Improvement in the characteristics of thin-film crystalline Si (c-Si) solar cells can be expected by using high-quality FLC poly-Si films formed from a-Si films with low defect density.


*Correspondence address, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292, Japan, Tel.: +81-761-51-1563, Fax: +81-761-51-1149, E-mail: , Web: http://www.jaist.ac.jp/ms/labs/ohdaira/home_e

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Received: 2016-12-18
Accepted: 2017-06-13
Published Online: 2017-09-28
Published in Print: 2017-10-16

© 2017, Carl Hanser Verlag, München

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