Abstract
The thermal relaxation kinetics of light-induced metastable defects in a-Si:H was studied prior to and after partial relaxation in the dark and in a dim light. The film lighting was found to change the relaxation rate of the defects and their distribution in relaxation time. This was demonstrated to be due to the concurrent light-induced relaxation and formation of the defects.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. Redfield, Appl. Phys. Lett. 52, 492 (1988).
H. Gleshkova, P. A. Morin, and S. Wagner, Appl. Phys. Lett. 62, 2063 (1993).
D. Redfield, Mater. Res. Soc. Symp. Proc. 258, 341 (1992).
J. K. Rath, W. Fuhs, and H. Mell, J. Non-Cryst. Sol. 137–138, 279 (1991).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © I.A. Kurova, N.N. Ormont, 2009, published in Vestnik Moskovskogo Universiteta. Fizika, 2009, No. 1, pp. 56–59.
About this article
Cite this article
Kurova, I.A., Ormont, N.N. Specificities of light-induced relaxation of metastable defects in amorphous hydrogenated silicon. Moscow Univ. Phys. 64, 58–61 (2009). https://doi.org/10.3103/S0027134909010135
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S0027134909010135