2018 年 84 巻 6 号 p. 578-583
Using electric field-assisted solid-state ion-exchange technique, metal ions were doped into a borosilicate glass and a buried metal precipitation thin layer was formed in the glass substrate. In this study, silver ions were doped into glass surface by voltage application using the silver foil as an anode (referred to as forward voltage). After ions doping by forward voltage application, a buried silver layer was formed in a glass substrate by additional voltage application with opposite direction to the case of doping (referred to as reverse voltage). Because the silver layer is electrically conductive and surrounded by glass matrix with high electric resistivity, the formed layer can be used as a buried electrical circuit in glass substrate. In order to form multi silver layers in glass, we alternatively doped silver and sodium ions into glass surface. In the case of sodium doping, a soda-lime glass sheet was used as a sodium ion source. Doped sodium ions exchanged the sites occupied by silver ions which doped in advance. As a result, we successfully formed the multi layered structure consisted of silver-rich and sodium-rich layers. In addition, two silver layers separated by sodium-lich layer were formed by reverse voltage application.