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Theoretical study on infrared thermal wave imaging detection of semiconductor silicon wafers with micro-crack defects

Tang Qing-Ju (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China + School of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, China), tangqingju@126.com
Gao Shuai-Shuai (School of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, China)
Liu Yong-Jie (School of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, China)
Wang Yun-Ze (School of Mechanical Engineering, Heilongjiang University of Science and Technology, Harbin, China)
Dai Jing-Min (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China)

The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element method. The results show the effectiveness of the proposed method for detecting micro-crack defects in semi­conductor silicon wafers.

Keywords: infrared thermal wave imaging technique, micro-crack, semiconductor silicon wafer, infrared thermal imaging, linear frequency, finite element method