Science of Sintering 2023 Volume 55, Issue 1, Pages: 57-70
https://doi.org/10.2298/SOS2301057P
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Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping
Požega Emina 
(Mining and Metallurgy Institute Bor, Bor, Serbia), ina.pozega@irmbor.co.rs
Vuković Nikola (Municipality of Kladovo, Kladovo, Serbia)
Gomidželović Lidija (Mining and Metallurgy Institute Bor, Bor, Serbia)
Janošević Miloš (Mining and Metallurgy Institute Bor, Bor, Serbia)
Jovanović Milenko (Mining and Metallurgy Institute Bor, Bor, Serbia)
Marjanović Saša (University of Belgrade, Technical Faculty Bor, Bor, Serbia)
Mitrović Milijana (University of Belgrade, Technical Faculty Bor, Bor, Serbia)
In order to study the effect of Zr doping on the thermoelectric properties
of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was
prepared by Bridgman method. Cut and cleaved samples from different regions
of ingot were characterized by a Hall Effect based on the Van der Pauw
method. The first measurements were conducted with four ohmic contacts at
room temperature and the obtained results were presented in our
investigation, earlier. Аlso, high charge carriers mobility was obtained on
the sample with silver contacts at the temperature of liquid nitrogen.
Single crystal was characterized by Seebeck coefficient (S), conductivity
(κ) and resistivity (ρ) measurements as а function of temperature in the
range of 40-320°C by a home-made impedance meter. The prepared single
crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.
Keywords: hall effect, thermoelectric properties, Bridgman method, single crystal
Project of the Ministry of Science, Technological Development and Innovation, Republic of Serbia, Grant no. 451-03-47/2023-01/200052
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