Nuclear Technology and Radiation Protection 2016 Volume 31, Issue 3, Pages: 240-246
https://doi.org/10.2298/NTRP1603240F
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Reliability of computer memories in radiation environment
Fetahović Irfan S. (State University of Novi Pazar, Novi Pazar)
Dolićanin Edin Ć. (State University of Novi Pazar, Novi Pazar)
Lončar Boris B. (Faculty of Technology and Metallurgy, Belgrade)
Kartalović Nenad M. 
(Institute of Electrical Engineering “Nikola Tesla”, Belgrade)
The aim of this paper is examining a radiation hardness of the magnetic
(Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM)
computer memories in the field of radiation. Magnetic memories have been
examined in the field of neutron radiation, and semiconductor memories in the
field of gamma radiation. The obtained results have shown a high radiation
hardness of magnetic memories. On the other side, it has been shown that
semiconductor memories are significantly more sensitive and a radiation can
lead to an important damage of their functionality.
Keywords: magnetic memory, semiconductor memory, radioactive reliability, gamma radiation, neutron radiation
Projekat Ministarstva
nauke Republike Srbije, br. 171007