To meet the escalating data transmission demands of interconnects, a dense wavelength division multiplexing microring modulator array has been demonstrated on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the silicon depletion-mode modulator simultaneously achieves a high bandwidth of ~ 48.6 GHz and a high modulation efficiency with Vπ·L of ~ 0.6 V·cm, thereby enabling open eye diagrams at 200 Gb/s PAM4 with a swing voltage of 1.6 V and energy consumption of 6.3 fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.