Boron determination in a silicon carbide (SiC) sample was carried out by a dissolution technique with an alkaline solution. Using the proposed method, a 0.50 g sample of silicon carbide powder was placed in a platinum dish and fused with 3.0 g of sodium carbonate. After the cake was dissolved in water, boron was determined by inductively coupled plasma atomic emission spectrometry (ICP-AES). Through this method, it was possible to determine with high precision the amount of boron in the SiC sample.