Wafer-Scale Integration of Graphene-Based Photonic Devices.
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Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V-1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.
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1936-086X
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Engineering and Physical Sciences Research Council (EP/K017144/1)
Engineering and Physical Sciences Research Council (EP/L016087/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (via University of Manchester) (R119256)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
Engineering and Physical Sciences Research Council (1799076)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)
European Research Council (319277)
European Research Council (842251)