jats:titleAbstract</jats:title>jats:pQuantum dot‐based light‐emitting diodes (QD‐LEDs) have excellent optical properties; however, their limitations of stability, reproducibility, and scalability due to the solution process are the major drawback. Herein, blue QD‐LEDs fabricated with the conventional vacuum process using an e‐beam‐evaporated TiOjats:sub2</jats:sub> thin film as an electron transport layer (ETL) are demonstrated. CdZnS/ZnS‐based blue LEDs with a TiOjats:sub2</jats:sub> thin film are fabricated under ambient conditions. They exhibit maximum external quantum efficiencies of 3.53% and a peak luminance of 2847 cd mjats:sup−2</jats:sup>. These values are retained, which minimizes performance degradation under high potential bias. In addition, the optimized evaporated TiOjats:sub2</jats:sub> thin film has a negligible red shift (0.5 nm) of the peak wavelength between the photoluminescence spectrum and electroluminescence spectrum with stable full‐width at half‐maximum changing by less than 2 nm at high voltage. Finally, a blue QD‐LED is fabricated on a scalable emission area of 2 × 2 in. with a patterned cathode accompanied by an evaporated TiOjats:sub2</jats:sub> thin film, which allows to perform conventional photolithography. A highly stable and reproducible vaporized inorganic thin film as the ETL supports the multilayer architecture to minimize the process damage.</jats:p>