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High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)

An International Journal 

ISSN for PRINT: 1093-3611

Institutional price:

$604.00

Issues per year:

4

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Best Paper Award Selection - Editorial Board Site

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2006, Volume10

Issue 3

  172 pages  

DOI: 10.1615/HighTempMatProc.v10.i3   

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  • LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CARBON FILMS ON DIFFERENT SUBSTRATES
  • A. Ya. Vinogradov
    A.F. Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, 194021, St.-Petersburg, Russia

    A. N. Andronov
    St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia

    A. B Ustinov
    St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia

    K. E. Orlov
    St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia

    A. S. Smirnov
    St.-Petersburg State Polytechnical University, Polytechnicheskaya 29, 195251, St-Petersburg, Russia


    ABSTRACT

    Polymer and diamond like carbon thin films were deposited at temperature below 250°C by high frequency (40−60 MHz) plasma enhanced chemical vapor deposition. The films have been successfully deposited on metal (Ti, Cu, Mo, Ta, Ni, Pt), silicon, germanium, ceramic, quarts and glass flat substrates as well as on 3-D objects: metal balls, washer, tips, cones. Electron field emission, optical and electrical properties, mechanical and tribological behavior of the films were studied in comparison with their structure, phase and chemical composition. Plasma pre-treatment of the substrate, ion bombardment and etching of growing film surface were found to be the key factors of the film deposition process.

    DOI: 10.1615/HighTempMatProc.v10.i3.90

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