A 6-10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-µm 1P6M standard CMOS process. The CMOS LNA and TA are checked by on-wafer measurement with the DC supply voltage of 1.5V. From 6-10GHz, the broadband LNA exhibits a noise figure of 5.3-6.2dB, a gain of 11-13.8dB, a P_1dB of -15.7--10.8dBm, a IIP3 of -5.5--1dBm, a DC power consumption of 12mW, and an input/output return loss higher than 11/12dB, respectively. From 6-10GHz, the broadband TA exhibits a gain of 7.6-10.5dB, a OP_1dB of 2.8-6.1dBm, a OIP3 of 12.3-15.1dBm, and a PAE of 8.8-17.6% @ OP_1dB, and a η of 9.7-21.1% @ OP_1dB, and an input/output return loss higher than 6.8/3.2dB, respectively.