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Structural Defects in Mg-doped GaN and AlGaN grown by MOCVD

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Abstract

We have investigated the structural defects formed in Mg-doped GaN and AlGaN epitaxial layers grown by metal organic chemical vapor deposition. These defects have an inverse pyramidal shape and appear when the Mg concentration [Mg] is higher than ∼4×1019/cm3. The density of the defects increases as [Mg] increases, but the size of the defects becomes smaller as [Mg] increases. The density of the defects also has a strong correlation with the hydrogen concentration in the epitaxial layers. Transmission electron microscope analysis reveals that the defects have an inversion operation to the matrix and that their boundaries are Mg-rich. We also propose a model for defect formation.

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Authors and Affiliations

  1. Material Analysis Dept. Technical Solution Center, Sony Corporation, USA

    S. Tomiya

  2. Development Center, Sony Shiroishi Semiconductor, Inc., USA

    S. Goto, M. Takeya & M. Ikeda

Authors
  1. S. Tomiya
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  2. S. Goto
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  3. M. Takeya
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  4. M. Ikeda
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Tomiya, S., Goto, S., Takeya, M. et al. Structural Defects in Mg-doped GaN and AlGaN grown by MOCVD. MRS Online Proceedings Library 743, 127 (2002). https://doi.org/10.1557/PROC-743-L12.7

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  • DOI: https://doi.org/10.1557/PROC-743-L12.7

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