Abstract
A new design for a field effect transistor able to push back the physical limits of Moore’s Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951-7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.
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Panhuis, M., Coleman, J.N., Popelier, P.A. et al. MRS 2001 (Boston): Design and Quantification of a Nanoscale Field Effect Transistor: Distributed Response Analysis for Investigating Conductive Behaviour.. MRS Online Proceedings Library 706, 1161 (2001). https://doi.org/10.1557/PROC-706-Z11.6.1
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DOI: https://doi.org/10.1557/PROC-706-Z11.6.1