Abstract
Spectroscopic ellipsometry is one of the most important tools for thin film metrology. It is now intensively used in microelectronics and especially for the microlithographic applications. Instrumentation for the next generation of VUV lithography at 157nm requires special optical setup since oxygen and water are extremely absorbing below 190nm. Recently a new ellipsometer included in a purged glove box to reduce the oxygen and water contamination in the part per million range has been developed. In the VUV range, roughness and interface diffusion become critical since the layer thickness is generally reduced. An independent characterization technique like the grazing x-ray reflectance is then extremely complementary to ellipsometry in this wavelength region. The present paper presents recent results on up to date lithography samples combining the two characterization techniques. Photoresists and gate dielectrics are successively examined.
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Boher, P., Evrard, P., Piel, J.P. et al. Precise Characterization of Resists and Thin Gate Dielectrics in the VUV Range for 157nm Lithography. MRS Online Proceedings Library 636, 921 (2000). https://doi.org/10.1557/PROC-636-D9.2.1
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DOI: https://doi.org/10.1557/PROC-636-D9.2.1