Abstract
A simple ion-implanted bipolar transistor technology in 4H-SiC is presented. Suitable for both high-voltage vertical devices and lateral high-temperature transistors (for circuit applications), the technology is based on an implanted boron p-well with nitrogen and boron (or aluminium) implanted n+ and p+ regions respectively. The effects of base doping and carrier lifetime on device performance have been studied using TCAD techniques. It is shown that understanding the strong variation of carrier concentration with temperature (due to deep activation levels) and applied field (so-called field ionization) is critical in device design optimisation. The effects of post-implant anneal conditions on the physical and electrical characteristics of the junctions are investigated. It is shown that annealing can remove much of the damage induced by high dose nitrogen implantation but that residual damage is still present. The electrical characteristics of simple BJT transistors with breakdown voltages in excess of 1000V and common-emitter gains of ≈2 is related to the level of such residual damage.
Similar content being viewed by others
References
Baliga, BJ, Proc. ISPSD98, Kyoto, Japan, 1998, pp. 5–10.
Agarwal, AK, et al., Diamond and Related Materials, pp. 295–301.
J. W. Plmour, J. A. Edmond, H. S. Kong and C. H. Carter Jr., Physica B, 185, pp461–465 (1993).
B. J. Baliga, Modern Power Devices, Wiley and Sons (1987).
MEDICI User manual, 4ed., AVANTI Corp., 1999
K. Adachi, C. M. Johnson, S. Ortolland, N.G. Wright, A.G. O’Neill, Proceedings of ISCRM’99 (to be published).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wright, N.G., Johnson, C.M., O’Neill, A.G. et al. Implanted Bipolar Technology in 4H-SiC. MRS Online Proceedings Library 622, 171 (2000). https://doi.org/10.1557/PROC-622-T1.7.1
Published:
DOI: https://doi.org/10.1557/PROC-622-T1.7.1