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Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

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Abstract

Dielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

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Acknowledgments

This project was supported by the National Science Council, Taipei, Taiwan, under contract numbers NSC 88-2112-M-002-022 and NSC 89-2112-M-002-047. Technical assistance from Dr. P. D. Kichambare is also acknowledged.

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Authors and Affiliations

  1. Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan

    L. C. Chen, C. T. Wu & C.-Y. Wen

  2. Academia Sinica, Institute of Atomic and Molecular Sciences, Taipei, Taiwan

    J.-J. Wu

  3. Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

    W. T. Liu & C. W. Liu

Authors
  1. L. C. Chen
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  2. C. T. Wu
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  3. C.-Y. Wen
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  4. J.-J. Wu
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  5. W. T. Liu
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  6. C. W. Liu
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Chen, L.C., Wu, C.T., Wen, CY. et al. Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride. MRS Online Proceedings Library 592, 227–233 (1999). https://doi.org/10.1557/PROC-592-219

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  • DOI: https://doi.org/10.1557/PROC-592-219

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