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Alternate Gate Oxides for Silicon Mosfets Using High- k Dielectrics

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Abstract

High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802-5005, USA

    C. A. Billman, P. H. Tan, K. J. Hubbard & D. G. Schlom

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  1. C. A. Billman
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  2. P. H. Tan
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  3. K. J. Hubbard
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  4. D. G. Schlom
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Correspondence to C. A. Billman.

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Billman, C.A., Tan, P.H., Hubbard, K.J. et al. Alternate Gate Oxides for Silicon Mosfets Using High- k Dielectrics. MRS Online Proceedings Library 567, 409–414 (1999). https://doi.org/10.1557/PROC-567-409

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  • DOI: https://doi.org/10.1557/PROC-567-409

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