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Structural Changes in a-Si:H Studied by X-Ray Photoemission Spectroscopy

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Abstract

X-ray irradiation-induced structural changes in undoped a-Si:H have been investigated in detail by X-ray photoemission spectroscopy (XPS). The Si2s and the Si2p peaks were found to shift simultaneously to lower bonding energies, by the same amount, with X-ray irradiation. The shifts are near saturation, at about 0.1 eV, after one hour of irradiation at the intensity used; they can be reversed almost completely, seemingly with an activation energy lower than that for the metastable changes in electronic properties (Staebler-Wronski effect). The present results suggest that essentially the whole Si network structure is affected by the X-ray irradiation.

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Authors and Affiliations

  1. Groupe de Recherche en Physique et Technologie des Couches Minces & Département de Génie Physique et de Génie des Matériaux, École Polytechnique de Montréal, Montréal, Québec, H3C 3A7, Canada

    Shuran Sheng, Edward Sacher & Arthur Yelon

  2. National Renewable Energy Laboratory, Golden, CO, 80401, USA

    Howard M. Branz

  3. Nortel Technology, Ottawa, Ontario, K1Y 4H7, Canada

    Denis P. Masson

Authors
  1. Shuran Sheng
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  2. Edward Sacher
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  3. Arthur Yelon
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  4. Howard M. Branz
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  5. Denis P. Masson
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Sheng, S., Sacher, E., Yelon, A. et al. Structural Changes in a-Si:H Studied by X-Ray Photoemission Spectroscopy. MRS Online Proceedings Library 557, 359–364 (1999). https://doi.org/10.1557/PROC-557-359

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  • DOI: https://doi.org/10.1557/PROC-557-359

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