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Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling

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Abstract

Positron annihilation spectroscopy has been used to profile the distribution of defects following implantation of 120keV Ge+ into (100) Si in the dose range l x 1010 - 1x104 cm-2. The openvolume defect profiles can be adequately fitted assuming a simple rectangular block distribution extending to 350nm. Using anodic oxidation and etching, a procedure is described which allows details of the defect tails beyond the range of the implanted ion, usually inaccessible to positron -2 annihilation measurements, to be determined. For a time averaged dose-rate (Jt) of 0.02µA cm-2 and incident angle of 7°, open-volume defects are found to exist at concentrations exceeding 1016cm-3 at depths upto 600nm whereas the peak of the depth distribution of the implanted ions (Rp) is 76nm, measured using SIMS. When the time-average dose-rate is increased by a factor of 10, defects persist at concentrations in excess of 1017cm-3 beyond lµm and the Rp increases to 101nm. The open-volume defect profiles are compared to those deduced from Rutherford backscattering-channeling using the fitting routine DICADA.

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Authors and Affiliations

  1. School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, GU2 5XH, UK

    A. P. Knights, A. Nejim, N. P. Barradas & R. Gwilliam

  2. School of Physics, University of East Anglia, Norwich, NR4 7TJ, UK

    P. G. Coleman & F. Malik

  3. MATS UK, Innovation House, Daten Park, Warrington, WA3 6UT, UK

    H. Kherandish & S. Romani

Authors
  1. A. P. Knights
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  2. A. Nejim
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  3. N. P. Barradas
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  4. R. Gwilliam
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  5. P. G. Coleman
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  6. F. Malik
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  7. H. Kherandish
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  8. S. Romani
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Correspondence to A. P. Knights.

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Knights, A.P., Nejim, A., Barradas, N.P. et al. Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling. MRS Online Proceedings Library 532, 79–84 (1998). https://doi.org/10.1557/PROC-532-79

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  • DOI: https://doi.org/10.1557/PROC-532-79

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